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BAT 64...W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 3 2 1 VSO05561 BAT 64W BAT 64-04W BAT 64-05W BAT 64-06W ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 64W BAT 64-04W BAT 64-05W BAT 64.
Tstg Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W Junction - ambient 1) BAT 64-04/06W Junction - ambient 1) BAT 64-05W Junction - soldering point BAT 64W Junction - soldering point BAT 64-04/06W Junction - soldering point BAT 64-05W RthJA RthJA RthJA RthJS RthJS RthJS ≤255 ≤290 ≤455 ≤120 ≤155 ≤185 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max..
BAT64-04W - Infineon Technologies AG
Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAT64-04 |
Siemens Semiconductor Group |
Silicon Schottky Diodes |
|
| 2 | BAT64-04 |
Infineon Technologies AG |
Silicon Schottky Diodes |
|
| 3 | BAT64-04 |
CDIL |
SILICON PLANAR SCHOTTKY DIODES |
|
| 4 | BAT64-04 |
JCET |
SCHOTTKY BARRIER DIODE |
|
| 5 | BAT64-04 |
MCC |
Small Signal Schottky Diode |
|
| 6 | BAT64-02V |
Infineon Technologies AG |
Silicon Schottky Diodes |
|
| 7 | BAT64-02W |
Infineon Technologies AG |
Silicon Schottky Diodes |
|
| 8 | BAT64-05 |
Siemens Semiconductor Group |
Silicon Schottky Diodes |
|
| 9 | BAT64-05 |
Infineon Technologies AG |
Silicon Schottky Diodes |
|
| 10 | BAT64-05 |
CDIL |
SILICON PLANAR SCHOTTKY DIODES |
|
| 11 | BAT64-05 |
JCET |
SCHOTTKY BARRIER DIODE |
|
| 12 | BAT64-05 |
MCC |
Small Signal Schottky Diode |
|