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BAT54SW - NXP

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BAT54SW Schottky barrier diodes

Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Low forward voltage  Low capacitance  AEC-Q101 qualified 1.3 Applications  Ultra high-speed switching  Line termination  Voltage clamping  Reverse po.

Features


 Low forward voltage
 Low capacitance
 AEC-Q101 qualified 1.3 Applications
 Ultra high-speed switching
 Line termination
 Voltage clamping
 Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Per diode VR reverse voltage VF forward voltage IF = 100 mA IR reverse current VR = 25 V [1] Pulse test: tp  300 s;   0.02. 2. Pinning information Min Typ Max Unit - - 30 V [1] - - 800 mV [1] - - 2 A Table 2. Pinning Pin Description BAT54W 1 anode 2 not connected 3 cathode Simpl.

The same part from a different manufacturer

Datasheet BAT54SW - STMicroelectronics BAT54SW

Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages. Single and double diodes with diff.

Datasheet BAT54SW - UTC BAT54SW

Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes .

Datasheet BAT54SW - IRF BAT54SW

Features Units A V A V mW °C This Schottky barrier diode is designed for high speed switching application, voltage clam.

Datasheet BAT54SW - nexperia BAT54SW

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (.

Datasheet BAT54SW - Taiwan Semiconductor BAT54SW

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provide.

Datasheet BAT54SW - DIODES BAT54SW

Product Summary (@ +25°C) VRRM (V) IF (mA) VF Max (mV) @ 1mA 30 200 320 IR Max (µA) @ 25V 2 Applications  SMPS .

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