SCHOTTKY DIODE RoHS BAT54A-C-S Features Power dissipation PD : 200 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 30V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C -+ CO+ BAT54 Marking:KL1 - -- BAT54A Marking:KL2 + 2.9 1.9 0.95 0.95 0.4 IC+ + NBAT54C Marking:KL3 +- BAT54S Marking:KL4 1 1. 2.4 1.3 SOT-.
Power dissipation PD : 200 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 30V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C -+ CO+ BAT54 Marking:KL1 - -- BAT54A Marking:KL2 + 2.9 1.9 0.95 0.95 0.4 IC+ + NBAT54C Marking:KL3 +- BAT54S Marking:KL4 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR Unit:mm OElectro-Optical Characteristics RParameter Symbol Test Condition (Ta=25 C) MIN. MAX. Unit TReverse breakdown voltage V(BR) IR=100 A 30 V CReverse Voltage leakage current IR VR=75V EForward Voltage ELDiode Capacitance IF=0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAT54A-G |
Comchip Technology |
Surface Mount Schottky Diode | |
2 | BAT54A-G |
Vishay |
Small Signal Schottky Diodes | |
3 | BAT54A-Q |
nexperia |
Schottky barrier diode | |
4 | BAT54A-V |
Vishay Siliconix |
(BAT54x-V) Small Signal Schottky Diodes | |
5 | BAT54A |
NXP |
Schottky barrier diodes | |
6 | BAT54A |
Rectron Semiconductor |
DUAL SURFACE MOUNT SCHOTTKY | |
7 | BAT54A |
General Semiconductor |
Schottky Diodes | |
8 | BAT54A |
Vishay Telefunken |
Small Signal Schottky Diodes | |
9 | BAT54A |
Micro Commercial Components |
250mWatt/ 30Volt Schottky Barrier Diode | |
10 | BAT54A |
Comchip Technology |
Surface Mount Schottky Diode | |
11 | BAT54A |
WON-TOP |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
12 | BAT54A |
GME |
Surface Mount Schottky Barrier diode |