BAT17-04W - Siemens Semiconductor Group

BAT17-04W Silicon Schottky Diode

BAT 17W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications 3 2 1 BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W VSO05561 Type BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W Marking Ordering Code 53s 54s 55s 56s Q62702-A1271 Q62702-A1272 Q62702-A1273 Q62702-A1274 Pin Configuration 1=A 1 = A1 1 = A1 3 = C1 .

Features

lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 4 V µA I (BR) = 10 µA Reverse current VR = 3 V VR = 4 V Reverse current - - 0.25 10 1.25 nA mV IR VF VR = 3 V, TA = 60 °C Forward voltage I F = 0.1 mA I F = 1 mA I F = 10 mA AC characteristics Diode capacitance 200 250 350 275 340 425 350 450 600 CT rf 0.4 - 0.55 8 0.75 15 pF Ω VR = 1 V, f = 1 MHz Differentia.