Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAT165... BAT165 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BAT165 Package SO.
o be considered. Please refer to the atteched curves. 3For calculation of RthJA please refer to Application Note Thermal Resistance Unit K/W 1 2007-04-19 BAT165... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current1) VR = 30 V VR = 40 V VR = 40 V, TA = 65 °C IR - - 12 - - 50 - - 900 Forward voltage IF = 10 mA IF = 100 mA VF 0.23 0.315 0.4 0.32 0.39 0.47 IF = 250 mA IF = 750 mA 0.35 0.44 0.54 0.44 0.58 0.74 Unit µA V AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz 1Pulsed test: t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAT16-046 |
Infineon Technologies |
(BATxx-xxx) Microwave RF & Tuner Diodes | |
2 | BAT160 |
NXP |
Silicon Schottky Diode | |
3 | BAT160A |
NXP |
Silicon Schottky Diode | |
4 | BAT160C |
NXP |
Silicon Schottky Diode | |
5 | BAT160S |
NXP |
Silicon Schottky Diode | |
6 | BAT165A |
nexperia |
Schottky barrier rectifier | |
7 | BAT165WS |
SEMTECH |
SCHOTTKY BARRIER DIODE | |
8 | BAT1000 |
Diodes Incorporated |
1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
9 | BAT114-099 |
Siemens Semiconductor Group |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) | |
10 | BAT114-099R |
Siemens Semiconductor Group |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) | |
11 | BAT120 |
NXP |
Schottky barrier double diodes | |
12 | BAT120A |
NXP |
Schottky barrier double diodes |