Silicon Schottky Diodes q q q q BAT 15- … S Beam lead technology Low dimension High performance Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S Maximum Ratings Parameter Symbol Values BAT 15-020 S BAT 15-050 S Reverse voltage Forward current Junction temperat.
10 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB
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– rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S
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– 3.5 4.0 7.0 10.0
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– 6.0 6.5 6.5 7.0
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– Ω
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– 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45
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– dB V(BR) CT
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– 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V 4
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– V pF Values typ. max. Unit
Forward voltage IF = 1 mA
IF = 10 mA
Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 15-020 S f = 6.0 GHz BAT 15-050 S f = 9.3 GHz BAT 15-090 S f = 16 GHz BAT 15-110 S Differential forward resistance IF = 10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAT15-013 |
Siemens Semiconductor Group |
HiRel Silicon Schottky Diode | |
2 | BAT15-014 |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
3 | BAT15-014 |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
4 | BAT15-020D |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
5 | BAT15-020R |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
6 | BAT15-020S |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
7 | BAT15-02EL |
Infineon |
Silicon Schottky Diodes | |
8 | BAT15-02ELS |
Infineon |
Silicon Schottky Diodes | |
9 | BAT15-02L |
Infineon Technologies AG |
Silicon Schottky Diode | |
10 | BAT15-02V |
Infineon Technologies AG |
Silicon Schottky Diode | |
11 | BAT15-033 |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
12 | BAT15-034 |
Siemens Semiconductor Group |
Silicon Schottky Diode |