BAS78 - Infineon Technologies AG

BAS78 Silicon Switching Diodes

BAS78A...BAS78D Silicon Switching Diodes
Switching applications
High breakdown voltage 4 3 2 1 2, 4 1 EHA00004 VPS05163 Type BAS78A BAS78B BAS78C BAS78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking BAS 78A BAS 78B BAS 78C BAS 78D 1=A 1=A 1=A 1=A Pin Configuration 2=C 2=C 2=C 2=C 3.

Features

haracteristics Breakdown voltage I(BR) = 100 µA BAS78A BAS78B BAS78C BAS78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100
, measured at IR = 200mA trr 1 CD 10 - Unit max. V typ. V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 - µA pF µs Test circuit for reverse recovery time DUT tr 10% tp t ΙF t rr t ΙF Oscillograph 90% VR Ι R = 20 mA EHN00020 Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50
Oscillograph: R = .