BAS70-04L - ON Semiconductor

BAS70-04L Schottky Barrier Diode

98ASB42226B Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United .

Features

• Extremely Fast Switching Speed
• Low Forward Voltage
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Symbol Value Unit Forward Current Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s) IF 70 mA IFSM 100 mA Reverse Voltage VR 70 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 .