BAS40-06LT1 - ON Semiconductor

BAS40-06LT1 SCHOTTKY BARRIER DIODE

BAS40-06LT1 Preferred Device Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http:.

Features

ices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 April, 2000
  – Rev. 3 Publication Order Number: BAS40
  –06LT1/D BAS40
  –06LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR VF VF VF Min 40 — — — — — Max — 5.0 1.0 380 500 1.0 Unit Volts pF µAdc mVdc mVdc Vdc 100 IF, FORWAR.