BAS40-04LT1G - ON Semiconductor

BAS40-04LT1G Dual Series Schottky Barrier Diode

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Features

• Extremely Fast Switching Speed
• Low Forward Voltage
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 40 V PF 225 mW 1.8 mW/°C Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Forward Continuous Current IFM 120 mA Single Forward Current tv1s t v 10 ms IFSM mA 200 6.