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Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Switching time typical: trr = 0.8 µs • Low leakage current typical: IR = 3 pA • Repetitive peak reverse voltage: VRRM ≤ 85 V • Low capacitance typical: Cd = 2 pF • Leadless ultra small.
• Switching time typical: trr = 0.8 µs
• Low leakage current typical: IR = 3 pA
• Repetitive peak reverse voltage: VRRM ≤ 85 V
• Low capacitance typical: Cd = 2 pF
• Leadless ultra small SMD plastic package
• Low package height of 0.48 mm
• AEC-Q101 qualified
3. Applications
• Low-leakage current applications
• General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse Tj = 25 °C voltage
IF
forward current
Tamb = 25 °C
[1]
VR
reverse voltage
Tj = 25 °C
VF
forward voltage
IF = 150 mA; Tj = 25 °C
IR
.
BAS116L - ON Semiconductor
BAS116L Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAS116 |
nexperia |
Low-leakage diode |
|
| 2 | BAS116 |
Diodes Incorporated |
SURFACE MOUNT LOW LEAKAGE DIODE |
|
| 3 | BAS116 |
Infineon |
Silicon Low Leakage Diode |
|
| 4 | BAS116 |
Kexin |
Low-leakage diode |
|
| 5 | BAS116 |
LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE |
|
| 6 | BAS116 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
|
| 7 | BAS116 |
Taiwan Semiconductor |
75V Switching SMD Diode |
|
| 8 | BAS116 |
TAITRON |
Three Terminals SMD Low Leakage Switching Diode |
|
| 9 | BAS116-AU |
Pan Jit International |
LOW LEAKAGE SWITCHING DIODES |
|
| 10 | BAS116GW |
nexperia |
Low leakage switching diode |
|
| 11 | BAS116H |
NXP |
low leakage diode |
|
| 12 | BAS116H |
nexperia |
Low leakage switching diode |
|