BA779S - Vishay Telefunken

BA779S Silicon PIN Diodes

BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 1.

Features

D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125
  –55...+125 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance.