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BA282.BA283 Vishay Telefunken Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9367 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF .
D Low differential forward resistance D Low diode capacitance D High reverse impedance
Applications
94 9367
Band switching in VHF
–tuners
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150
–55...+150 Unit V mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 350 Unit K/W
Document Number 85526 Rev. 2, 01-Apr-99
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BA282.BA283
Vishay Telefunken.
BA283 - WEJ
RoHS BA282/BA283 Band switching diode TDFeatures 1. Low differential forward resistance .,L2. Low diode capacitance 3. .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BA282 |
Vishay Telefunken |
Silicon Planar Diodes |
|
| 2 | BA282 |
WEJ |
Band switching diode |
|
| 3 | BA201 |
Fuji Electric |
FAST RECOVERY DIODE |
|
| 4 | BA201N |
Bencent |
SMD Gas Discharge Tube |
|
| 5 | BA20880 |
Biforst Technology |
2W Stereo Class-D Audio Power Amplifier |
|
| 6 | BA2107G |
ROHM |
Low Noise Operational Amplifiers |
|
| 7 | BA2115F |
Rohm |
Low Noise Operational Amplifiers |
|
| 8 | BA2115FJ |
ROHM |
Low Noise Operational Amplifiers |
|
| 9 | BA2115FVM |
ROHM |
Low Noise Operational Amplifiers |
|
| 10 | BA217 |
Fairchild Semiconductor |
General Purpose Diodes |
|
| 11 | BA218 |
Fairchild Semiconductor |
General Purpose Diodes |
|
| 12 | BA220 |
NXP |
High-speed diode |
|