BA12003DF-Z - ROHM

BA12003DF-Z Darlington Transistor Array

BA12003DF-Z, BA12004DF-Z are darlington transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Applications.

Features

■ Built-in 7 circuits
■ High output break down voltage
■ High DC output current gain
■ Built-in input resistor to limit base current
■ Built-in output surge absorption clamp diode Applications
■ Motor Drivers
■ LED Drivers
■ Solenoid Drivers
■ Low Side Switch Key Specifications
■ Output break down voltage： VCE=60V(max)
■ Output current： Io=500mA/ch(max)
■ Operating supply voltage range： -0.5V to +30V
■ Operating temperature range： -40°C to +85°C
■ DC current gain： hfe=1000(min)
■ Input resistor： BA12003DF-Z Rin=2.7kΩ BA12004DF-Z Rin=10.5kΩ Packages SOP-J16A W(Typ) x D(Typ) x H(M.