B824 - Sanyo Semicon Device

B824 2SB824

Ordering number:686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Package Dimensions unit:mm 2010C [2SB824/2SD1060] Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V m.

Features

· Low collector-to-emitter saturation voltage : VCE(sat)=(
  –)0.4V max/IC=(
  –)3A, IB=(
  –)0.3A. ( ) : 2SB824 JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : Emitter Ratings (
  –)60 (
  –)50 (
  –)6 (
  –)5 (
  –)9 Unit V V V A A W Tc=25˚C 30 150
  –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 2.