B716 - Hitachi Semiconductor

B716 2SB716

2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 3 2 1 1. Emitter 2. Collector 3. Base 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Coll.

Features

O — —
  –0.5 — — — — — — µA VCB =
  –80 V, IE = 0 — — — — —
  –0.5 — —
  –0.5 µA VCB =
  –100 V, IE = 0 DC current transfer ratio hFE1
*1 250 — 800 250 — 800 250 — 500 VCE =
  –12 V, IC =
  –2 mA hFE2 125 — — 125 — — 125 — — VCE =
  –12 V, IC =
  –10 mA Base to emitter voltage VBE — —
  –0.75 — —
  –0.75 — —
  –0.75 V VCE =
  –12 V, IC =
  –2 mA Collector to emitter saturation voltage VCE(sat) — —
  –0.2 — —
  –0.2 — —
  –0.2 V IC =
  –10 mA, IB =
  –1 mA Gain bandwidth product fT — 150 — — 150 — — 150 — MHz VCE =
  –12 V, IC =
  –5 mA Collector output capacitance Cob — 1.8 — — 1.8 — — 1.8 — pF VCB =
  –25 V, IE = 0, f.