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Transistors Power Transistor (−80V, −4A) 2SB1644 2SB1644 !Features 1) Low saturation voltage. (Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 13.1 3.2 10.1 5.08 2.54 (3) (2) (1) 1.24 0.78 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-e.
1) Low saturation voltage.
(Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 2) Excellent DC current gain characteristics.
!External dimensions (Units : mm)
13.1 3.2
10.1
5.08 2.54
(3) (2) (1)
1.24 0.78
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature
* Single pulse, Pw = 100ms
Symbol VCBO VCEO VEBO
IC
PC Tj Tstg
Limits −80 −80 −5 −4 −6 30 150 −55~+150
Unit V V V
A (DC)
*A (Pulse)
W (Tc = 25°C) °C °C
8.8
1.3 4.5
1.3 0.4
0to0.3
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | B1640 |
Toshiba Semiconductor |
2SB1640 |
|
| 2 | B1642 |
Toshiba |
2SB1642 |
|
| 3 | B1644J |
Rohm |
PNP -4A -80V Power Transistor |
|
| 4 | B1645 |
Panasonic Semiconductor |
2SB1645 |
|
| 5 | B1647 |
SavantIC |
2SB1647 |
|
| 6 | B1649 |
Allegro Micro Systems |
2SB1649 |
|
| 7 | B160 |
LITE-ON |
SCHOTTKY BARRIER RECTIFIER |
|
| 8 | B160 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 9 | B160-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 10 | B160-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 11 | B1601S |
WAHSONIC |
10/100 BASE-T MAGNETICS MODULES |
|
| 12 | B1603 |
EPCOS |
Low-Loss Filter |
|