Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification s Features q Low collector to emitter saturation voltage VCE(sat). q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Peak col.
q Low collector to emitter saturation voltage VCE(sat). q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage VCEO
Emitter to base voltage
VEBO
Peak collector current
ICP
*
Collector current
IC
Collector power dissipation PC
Junction temperature
Tj
Storage temperature
Tstg
* Applied are shot pulse of ≤1ms width
Ratings
–30
–25
–11
–10
–3 1 150
–55 ~ +150
Unit V V V A A W ˚C ˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.2 8.0±0.2
13.5±0.5
0.7±0.1
1.27
+0.15
0.45
–0.1
+0.15
0.45
–.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1594 |
Toshiba Semiconductor |
2SB1594 | |
2 | B150 |
LITE-ON |
SCHOTTKY BARRIER RECTIFIER | |
3 | B150 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
4 | B150-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
5 | B150-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
6 | B1503 |
Panasonic Semiconductor |
2SB1503 | |
7 | B1505D-1W |
MORNSUN |
SINGLE OUTPUT MINIATURE SIP/DIP | |
8 | B1505S-1W |
MORNSUN |
SINGLE OUTPUT MINIATURE SIP/DIP | |
9 | B1507 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
10 | B1508 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
11 | B1509 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | B150B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |