These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applicati.
TAB
TAB
Order codes
VDS
RDS(on) max.
ID
PTOT
123
t(s)I2PAK
3 2 1
TO-220
lete ProducTO-247 bsoFigure 1. Internal schematic diagram
- OD(2, TAB) duct(s)G(1) solete ProS(3) Ob AM01476v1
STB14NK60Z-1 STP14NK60Z
600 V
0.5 Ω 13.5 A 160 W
STW14NK60Z
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitances
• Very good manufacturing repeatability
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B14NK50Z |
STMicroelectronics |
N-Channel MOSFET | |
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