B1499 - Panasonic

B1499 Silicon PNP epitaxial planar type Power Transistors

Plhtetap:s//epvaisnita fsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmationS.o1l8d.e0r±0D.i5pDisMcaionnttiennuaendc Power Transistors 2SB1499, 2SB1499A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter satur.

Features

q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to 2SB1499 base voltage 2SB1499A VCBO
  –60
  –80 Collector to 2SB1499 emitter voltage 2SB1499A VCEO
  –60
  –80 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC
  –5
  –8
  –4 15 2 Junction temperature Storage temperature Tj 150 Tstg
  –55 to +150 Unit V V V A A W ˚C.