B1465 - Renesas

B1465 PNP SILICON EPITAXIAL TRANSISTOR

DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay drivers i.

Features

) 3. Emitter (E) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16130EJ2V0DS00 (2nd edition) Date Published November 2006 NS CP(K) Printed in Japan 2002 2SB1465 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = −300 V, IE = 0 Collector cutoff current ICEO VC.