B1457 - Toshiba

B1457 2SB1457

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta =.

Features

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SB1457 Characteristics Collector cut-off current Emitter cut-off current C.