·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 .
n Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Cain IC= -0.1A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V hFE Classifications DEF 60-120 100-200 160-320 Product Specification 2SB1353 MIN TYP. MAX UNIT -120 V -120 V -5 V -2.0 V -10 μA -10 μA 60 320 50 MHz isc website:www.iscsemi.cn 2 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1351 |
Sanken Electric |
2SB1351 | |
2 | B1357 |
Rohm |
2SB1357 | |
3 | B130 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
4 | B130 |
EIC |
SCHOTTKY BARRIER RECTIFIER | |
5 | B130-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
6 | B130-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
7 | B1301 |
Renesas |
PNP SIlicon Transistor | |
8 | B1302 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor | |
9 | B130B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
10 | B130BQ |
Diodes |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
11 | B130L |
DIODES |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
12 | B130LAW |
DIODES |
1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER |