·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SD2025 APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER .
R)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-3A ;IB=-6mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz -100 V Collector-base breakdown voltage -100 V Collector-emitter saturation voltage -1.0 -1.5 V Collector cut-off current -10 µA Emitter cut-off current -3.0 mA DC current gain 1000 20000 Transition frequency 12 MHz Output capacitance 90 pF 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1340 |
ROHM Electronics |
2SB1340 | |
2 | B1342 |
SavantIC |
2SB1342 | |
3 | B130 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
4 | B130 |
EIC |
SCHOTTKY BARRIER RECTIFIER | |
5 | B130-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
6 | B130-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
7 | B1301 |
Renesas |
PNP SIlicon Transistor | |
8 | B1302 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor | |
9 | B130B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
10 | B130BQ |
Diodes |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
11 | B130L |
DIODES |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
12 | B130LAW |
DIODES |
1.0A SURFACE-MOUNT SCHOTTKY BARRIER RECTIFIER |