B1317 - Panasonic

B1317 2SB1317

Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 s Features q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier s Absolute .

Features

q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC
  –180
  –180
  –5
  –25
  –15 150 3.5 Junction temperature Storage temperature Tj 150 Tstg
  –55 to +150 Unit V V V A A W ˚C ˚C .