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SMD Type Power transistor 2SB1184 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3.
Low VCE(sat). PNP silicon transistor. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -5 -3 1 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collec.
B1184 - Rohm
W M.T O .C W 00Y 1 M.T . O W C W WW .100Y. M.T O W WW .100Y.C M.TW .TW M / 2SB1243 WW 00Y.CO 2SB1184 W .CO .TW Y W T . 0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | B1182 |
Rohm |
2SB1182 |
|
| 2 | B1185 |
Rohm |
2SB1185 |
|
| 3 | B1186 |
SavantIC |
2SB1186 |
|
| 4 | B1187 |
Rohm |
2SB1187 |
|
| 5 | B110 |
Ferranti |
Low Voltage X-Ray Tube |
|
| 6 | B1100 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 7 | B1100 |
CTC |
SCHOTTKY BARRIER RECTIFIERS |
|
| 8 | B1100B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 9 | B1100BQ |
Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
|
| 10 | B1100CALRP |
Littelfuse |
SIDACtor Protection Thyristors |
|
| 11 | B1100CCLRP |
Littelfuse |
SIDACtor Protection Thyristors |
|
| 12 | B1100LB |
Diodes Incorporated |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
|