2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1067 Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Industrial Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1.
ility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SB1067 Characteristics Collector cut-off current Emitter cut-off current Collector.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1063 |
Panasonic Semiconductor |
2SB1063 | |
2 | B1064 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | B1064 |
Rohm |
2SB1064 | |
4 | B1068 |
NEC |
2SB1068 | |
5 | B10011S |
ATMEL Corporation |
CAN TRANSCEIVER | |
6 | B1007 |
SavantIC |
2SB1007 | |
7 | B1008 |
Rohm |
Epitaxial Planar PNP Silicon Transistor | |
8 | B100NF04L |
STMicroelectronics |
STB100NF04L | |
9 | B100xxL |
ETC |
Led Display Master Green | |
10 | B1010 |
Rohm |
PNP Silicon Transistor | |
11 | B1011 |
Panasonic Semiconductor |
2SB1011 | |
12 | B1012 |
Hitachi Semiconductor |
2SB1012 |