B1015A - Toshiba Semiconductor

B1015A 2SB1015A

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitt.

Features

dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = -0.5 A VCB = -10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ¾ ¾ -100 mA ¾ ¾ -100 mA -60 ¾ ¾ V 60 ¾ 200 20 ¾ ¾ ¾ -0.5 -1.7 V ¾ -0.7 -1.0 V ¾ 9 ¾ MHz ¾ 150 ¾ pF Turn-on time ton 20 ms Input IB1 Output ¾ 0.4 ¾ IB1 IB2 15 9 Switching time Storage time Fall time tstg IB2 VCC = -30 V tf -IB1 = IB2 = 0.2 A, duty cycle <= 1% ¾ 1.7 ¾ .