FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wid.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AM28F010 |
Advanced Micro Devices |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory | |
2 | Am28F020 |
AMD |
2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory | |
3 | Am28F020A |
AMD |
2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory | |
4 | AM28F256 |
Advanced Micro Devices |
256 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory | |
5 | Am28F256A |
Advanced Micro Devices |
256 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory | |
6 | AM28F512 |
Advanced Micro Devices |
512 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory | |
7 | AM28F512A |
Advanced Micro Devices |
512 Kilobit CMOS 12.0 Volt Bulk Erase Flash Memory | |
8 | AM2802 |
AMD |
(AM2802 - AM2804) 1024-Bit Dynamic Shift Registers | |
9 | AM2803 |
AMD |
(AM2802 - AM2804) 1024-Bit Dynamic Shift Registers | |
10 | AM2804 |
AMD |
(AM2802 - AM2804) 1024-Bit Dynamic Shift Registers | |
11 | AM2805 |
AMD |
(AM2805 - AM2808) Dynamic Shift Registers | |
12 | AM2806 |
AMD |
(AM2805 - AM2808) Dynamic Shift Registers |