AUIRLR3114Z - International Rectifier

AUIRLR3114Z Power MOSFET

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature D VDSS RDS(on) max @ 10V 40V 4.9mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level G max @ 4.5V ID (Silicon Limited) 6.5mΩ k130A l Lead-Free, RoHS Compliant l Automotive Qualified
* S ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, f.