Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
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Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFR3504 |
Infineon |
Power MOSFET | |
2 | AUIRFR3504 |
International Rectifier |
HEXFET Power MOSFET | |
3 | AUIRFR3504Z |
International Rectifier |
HEXFET Power MOSFET | |
4 | AUIRFR3607 |
International Rectifier |
Advanced Process Technology | |
5 | AUIRFR3710Z |
Infineon |
Power MOSFET | |
6 | AUIRFR3710Z |
International Rectifier |
Power MOSFET | |
7 | AUIRFR024N |
International Rectifier |
Power MOSFET | |
8 | AUIRFR024N |
Infineon |
Power MOSFET | |
9 | AUIRFR1010Z |
International Rectifier |
Power MOSFET | |
10 | AUIRFR1018E |
International Rectifier |
Power MOSFET | |
11 | AUIRFR120Z |
Infineon |
Power MOSFET | |
12 | AUIRFR120Z |
International Rectifier |
Power MOSFET |