The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB asse.
of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF7669L2TR |
International Rectifier |
Automotive DirectFET Power MOSFET | |
2 | AUIRF7669L2TR |
Infineon |
Power MOSFET | |
3 | AUIRF7665S2 |
Infineon |
Power MOSFET | |
4 | AUIRF7665S2TR |
International Rectifier |
N-Channel MOSFET | |
5 | AUIRF7665S2TR |
Infineon |
Power MOSFET | |
6 | AUIRF7665S2TR1 |
International Rectifier |
N-Channel MOSFET | |
7 | AUIRF7640S2TR |
Infineon |
Power MOSFET | |
8 | AUIRF7640S2TR |
International Rectifier |
DirectFET Power MOSFET | |
9 | AUIRF7640S2TR1 |
International Rectifier |
DirectFET Power MOSFET | |
10 | AUIRF7647S2TR |
International Rectifier |
DirectFET Power MOSFET | |
11 | AUIRF7647S2TR |
Infineon |
Power MOSFET | |
12 | AUIRF7647S2TR1 |
International Rectifier |
DirectFET Power MOSFET |