AUIRF7648M2TR - International Rectifier

AUIRF7648M2TR DirectFET Power MOSFET

The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications,.

Features

of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (.