AT847S25 - Power Semiconductors

AT847S25 PHASE CONTROL THYRISTOR

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT847 Repetitive voltage up to Mean on-state current Surge current 2500 V 2980 A 39.2 kA FINAL SPECIFICATION feb 97 - ISSUE : 02 Symbol Char.

Features

te current = 2100 A 25 125 125 125 2980 2370 39.2 7683 x1E3 1.22 0.85 0.175 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 3280 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 10V, 10 ohm , tr=.5 µs dV/dt = 20 V/µs linear up to 75% VDRM di/.