AT804S16 - Power Semiconductors

AT804S16 PHASE CONTROL THYRISTOR

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE Cb ONTROL THYRISTOR FINAL SPECIFICATION Feb 97 - ISSUE : 04 AT804 Repetitive voltage up to Mean on-state current Surge current 1600 V 985 A 12.5 kA Symbol Char.

Features

VT On-state voltage On-state current = 1600 A 25 1.63 V V T(TO) Threshold voltage 125 1.0 V rT On-state slope resistance 125 0.380 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1050 A, gate 10V 5ohm 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs td Gate controlled delay time, typical VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25 1.1 µs tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 200 µs Q rr Reverse recovery charge di/.