AT636S18 - Power Semiconductors

AT636S18 PHASE CONTROL THYRISTOR

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT636 Repetitive voltage up to Mean on-state current Surge current 1800 V 1965 A 36 kA FINAL SPECIFICATION feb 97 - ISSUE : 03 Symbol Charac.

Features

urrent = 2900 A 25 125 125 125 1965 1695 36 6480 x1E3 1.4 0.82 0.180 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 2200 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 25V, 10 ohm , tr=.5 µs dV/dt = 20 V/µs linear up to 75% VDRM di/dt=-20 .