AT52BR1674T - ATMEL Corporation

AT52BR1674T 16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory

The AT52BR1672(T) combines a 16-megabit Flash (1M x 16) and a 2-megabit SRAM (organized as 128K x 16) in a stacked CBGA package; while the AT52BR1674(T) combines a 16megabit Flash (1M x 16) and a 4-megabit SRAM (organized as 256K x 16) in a stacked CBGA package. Both devices operate at 2.7V to 3.3V in the industrial temperature range. The modules use a 16-me.

Features

• 16-Mbit Flash and 2-Mbit/4-Mbit SRAM
• Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package
• 2.7V to 3.3V Operating Voltage Flash
• 2.7V to 3.3V Read/Write
• Access Time
  – 85 ns
• Sector Erase Architecture
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  – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
  – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time
  – 20 µs Fast Sector Erase Time
  – 300 ms Dual-plane Organization, Permitting Concurrent Read While Program/Erase
  – Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
  – Memory Plane B: Twenty-four 32K Word Sectors Erase Sus.