128K x 16 SRAM & 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY FEATURES • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH • Built in decoupling caps and multiple ground pins for low noise • Organized as 128K x 16 SRAM and 512K x 16 FLASH • Low power CMOS • TTL Compatible Inputs and Outputs • Both blocks of memory are user configurable as 256K.
• Operation with single 5V supply
• High speed: 35ns SRAM, 90ns FLASH
• Built in decoupling caps and multiple ground pins for low
noise
• Organized as 128K x 16 SRAM and 512K x 16 FLASH
• Low power CMOS
• TTL Compatible Inputs and Outputs
• Both blocks of memory are user configurable as 256K x 8
FLASH MEMORY FEATURES
• Operation with single 5V (±10%)
• Eight equal sectors of 64K bytes
• Any combination of sectors can be concurrently
erased
• Supports full chip erase
• Embedded erase and program algorithms
• 20,000 program/erase cycles
• Hardware write protection
OPTIONS
MARKINGS
• Operating.
FUNCTION Address Inputs SRAM Data Input / Outputs FLASH Data Input / Outputs Output Enable SRAM Write Enables FLASH Writ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AS8S128K32 |
Austin Semiconductor |
128K x 32 SRAM SRAM MEMORY ARRAY | |
2 | AS8S512K32 |
Austin Semiconductor |
512K x 32 SRAM SRAM MEMORY ARRAY | |
3 | AS8S512K32 |
Micross |
512K x 32 SRAM | |
4 | AS8S512K32A |
Micross |
512K x 32 SRAM | |
5 | AS8S512K32A |
Austin Semiconductor |
512K x 32 SRAM SRAM MEMORY ARRAY | |
6 | AS8S512K32PEC |
Austin Semiconductor |
High Speed Static RAM Integrated Plastic Encapsulated Microcircuit | |
7 | AS8S512K32PECA |
Micross |
16 MB ASYNC SRAM | |
8 | AS8SLC128K32 |
Micross |
128K x 32 SRAM | |
9 | AS8SLC128K32 |
Austin Semiconductor |
128K x 32 SRAM SRAM MEMORY ARRAY | |
10 | AS8SLC512K32 |
Micross |
512K x 32 SRAM | |
11 | AS8SLC512K32 |
Austin Semiconductor |
512K x 32 SRAM SRAM Memory Array MCM | |
12 | AS8SLC512K32PEC |
Austin Semiconductor |
High Speed Static RAM Integrated Plastic Encapsulated Microcircuit |