AS6UA25616 - Alliance Semiconductor

AS6UA25616 low-power CMOS SRAM

The AS6UA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 55/70 ns are ideal for low-power applications. Active high and lo.

Features

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• AS6UA25616 Intelliwatt™ active power circuitry Industrial and commercial temperature ranges available Organization: 262,144 words x 16 bits 2.7V to 3.6V at 55 ns 2.3V to 2.7V at 70 ns Low power consumption: ACTIVE - 114 mW at 3.6V and 55 ns - 68 mW at 2.7V and 70 ns
• Low power consumption: STANDBY - 72 µW max at 3.6V - 41 µW max at 2.7V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages - 48-ball FBGA - 400-mil 44-pin TSOP II
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA Logic block diagram A.