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The AS6C8016-55TIN is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016-55TIN is well designed for low power application, and particularly well su.
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Fast access time : 55ns n
Low power consumption:
Operating current : 30/20mA (TYP.) Standby current : 1.5µA (TYP.) SL-version n
Single 2.7V ~ 3.6V power supply n
All inputs and outputs TTL compatible n
Fully static operation n
Tri-state output n
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
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Data retention voltage : 1.2V(MIN.)
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Package : 48-pin 12mm x 20mm TSOP-I n
Green & ROHS Compliant
FUNCTIONAL BLOCK DIAGRAM
Vcc Vss
A0-A18
DECODER
512Kx16 MEMORY ARRAY
DQ0-DQ7 Lower Byte
DQ8-DQ15 Upper Byte
I/O DATA CIRCUIT
CE# CE2 WE# OE# LB# UB#
CONTROL CIRCUIT
COLUMN I/O
AS6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AS6C8016 |
Alliance Semiconductor |
512K X 16 BIT SUPER LOW POWER CMOS SRAM |
|
| 2 | AS6C8016A |
Alliance Semiconductor |
512K x 16 SRAM |
|
| 3 | AS6C8008 |
Alliance Semiconductor |
1024K X 8 BIT SUPER LOW POWER CMOS SRAM |
|
| 4 | AS6C1008 |
Alliance Semiconductor |
128K X 8 BIT LOW POWER CMOS SRAM |
|
| 5 | AS6C1008L |
Alliance Semiconductor |
128k x 8 BIT SUPER LOW POWER CMOS SRAM |
|
| 6 | AS6C1016 |
Alliance Semiconductor |
64K X 16 BIT LOW POWER CMOS SRAM |
|
| 7 | AS6C1616 |
Alliance Semiconductor |
1024K X 16 BIT LOW POWER CMOS SRAM |
|
| 8 | AS6C1616A |
Alliance Semiconductor |
1024K X 16 BIT LOW POWER CMOS SRAM |
|
| 9 | AS6C2008 |
Alliance Semiconductor |
256K X 8 BIT LOW POWER CMOS SRAM |
|
| 10 | AS6C2008A |
Alliance Semiconductor |
256K X 8 BIT LOW POWER CMOS SRAM |
|
| 11 | AS6C2016 |
Alliance Semiconductor |
128K X 16 BIT LOW POWER CMOS SRAM |
|
| 12 | AS6C3216 |
Alliance Memory |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM |
|