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The is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. is well designed for low power The application, and particularly well suited for battery back-up nonvo.
Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 4 A (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage :1.5V(MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AS6C4008 |
Alliance Semiconductor |
512K X 8 BIT LOW POWER CMOS SRAM |
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| 2 | AS6C1008 |
Alliance Semiconductor |
128K X 8 BIT LOW POWER CMOS SRAM |
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| 3 | AS6C1008L |
Alliance Semiconductor |
128k x 8 BIT SUPER LOW POWER CMOS SRAM |
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| 4 | AS6C1016 |
Alliance Semiconductor |
64K X 16 BIT LOW POWER CMOS SRAM |
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| 5 | AS6C1616 |
Alliance Semiconductor |
1024K X 16 BIT LOW POWER CMOS SRAM |
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| 6 | AS6C1616A |
Alliance Semiconductor |
1024K X 16 BIT LOW POWER CMOS SRAM |
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| 7 | AS6C2008 |
Alliance Semiconductor |
256K X 8 BIT LOW POWER CMOS SRAM |
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| 8 | AS6C2008A |
Alliance Semiconductor |
256K X 8 BIT LOW POWER CMOS SRAM |
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| 9 | AS6C2016 |
Alliance Semiconductor |
128K X 16 BIT LOW POWER CMOS SRAM |
|
| 10 | AS6C3216 |
Alliance Memory |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM |
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| 11 | AS6C3216A-55TIN |
Alliance Semiconductor |
32M Bits(2M x 16 / 4M x 8 Switchable) LOW POWER CMOS SRAM |
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| 12 | AS6C62256 |
Alliance Semiconductor |
32K X 8 BIT LOW POWER CMOS SRAM |
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