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APTM120H29F - Advanced Power Technology

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APTM120H29F MOSFET Power Module

APTM120H29F Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1200V RDSon = 290mΩ max @ Tj = 25°C ID = 34A @ Tc = 25°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate .

Features


• Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4

• www.DataSheet4U.com OUT1 G1 S1 VBUS 0/VBUS G2 S2
• Benefits



• S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS.

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