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APTC60DHM35T3G - Microsemi

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APTC60DHM35T3G Asymmetrical Bridge Super Junction MOSFET Power Module

APTC60DHM35T3G Asymmetrical bridge Super Junction MOSFET Power Module 13 14 Q1 CR3 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged .

Features


• - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 18 22 19 7 23 8 Q4 CR2 4 3



• 29 15 30 31 32 16 R1 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and s.

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