APT10090SLL - Advanced Power Technology

APT10090SLL MOSFET

1000V 12A 0.900W APT10090BLL APT10090SLL BLL D3PAK TO-247 POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with.

Features

d Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD INF 1000 12 48 ±30 ±40 300 2.4 300 12 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ -55 to 150 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) R DS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 12 0.90 100 500 ±100 3 5 (VDS > I.