APL1001J - Advanced Power Technology

APL1001J N-Channel Power MOSFET

G S D SOT-227 S D G S APL1001J 1000V 18.0A 0.60W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM, lLM VGS Drain-Source Voltage Continuous Drain Current @ TC .

Features

ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) MIN 1000 18 2 TYP MAX 0.60 250 1000 ±100 4 UNIT Volts Amps Ohms µA nA Volts THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN 2500 TYP.