AP9467GJ-HF - Advanced Power Electronics

AP9467GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9467GJ) .

Features

-55 to 150 Units V V A A A W W/ ℃ W ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 2.8 62.5 110 Unit ℃/W ℃/W ℃/W 1 201005314 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9467GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs ID.