AP75T10GS - Advanced Power Electronics

AP75T10GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole versio.

Features

5 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W AP75T10GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 100 1 Min. - Typ. 0.09 52 69 12 39 12 75 220 250 540 310 1.1 Typ. 51 74 Max. Units 15 21 3 10 100 ±100 110.4 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns.