AP73T03GMP-HF - Advanced Power Electronics

AP73T03GMP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The ESOP-8 (Exposed pad SO-8) package is widely preferred for commercial-industrial surface mount applications and exposed backside design is compatible with PMPAK 5x6. ® D D D D D G ESOP-.

Features

Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 3 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201102141 AP73T03GMP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=20A VGS(th).