AP72T03GP-HF - Advanced Power Electronics

AP72T03GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP72T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applicatio.

Features

n Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 + 20 65 47 190 70 -55 to 175 -55 to 175 V V A A A W ℃ ℃ Thermal Data Symbol . Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 2.1 62 Units ℃/W ℃/W 1 201501144 AP72T03GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss C.