AP6800GEO - Advanced Power Electronics

AP6800GEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.5V Dr.

Features

ta and specifications subject to change without notice 200109061-1/4 AP6800GEO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=6A VGS=4V, ID=4A VGS=2.5V, ID=2A Min. 20 0.5 - Typ. 0.02 6 23.4 2.5 11.1 8.2 18.4 19.6 58 580 315 165 2 Max. Units 20 21 25 1.2 1 25 ±30 37 930 3 V V/℃ mΩ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGS.